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New answer posted
7 months agoContributor-Level 10
This is a Short Answer Type Questions as classified in NCERT Exemplar
Explanation- In CE transistor amplifier, the power gain is very high.
In this circuit, the extra power required for amplified output is obtained from DC source.
Thus, the circuit used does not violet the law of conservation.
New answer posted
7 months agoContributor-Level 10
This is a Short Answer Type Questions as classified in NCERT Exemplar
Explanation- as we know total voltage amplification =
Avx= 10, Avy = 20, Avz = 30
vi = 1mV= 10-3V
So according to formula
= (Avx ) (Avy ) (Avz)
vo = (Avx ) (Avy ) (Avz) vi
= 10-3 =6V
So in first case output cannot be greater than 6V but in 2nd case it will work
New answer posted
7 months agoContributor-Level 10
This is a Short Answer Type Questions as classified in NCERT Exemplar
Explanation- diode only works in forward biased. So output waveform is

New answer posted
7 months agoContributor-Level 10
This is a Short Answer Type Questions as classified in NCERT Exemplar
Explanation- We cannot measure the potential barrier across a p-n junction by a voltmeter because the resistance of voltmeter is very high as compared to the junction resistance.
New answer posted
7 months agoContributor-Level 10
This is a Short Answer Type Questions as classified in NCERT Exemplar
Explanation- A material is a conductor if in its energy band diagram, there is no energy gap between conduction band and valence band. For insulator, the energy gap is large and for
semiconductor the energy gap is moderate.
The energy gap for Sn is 0 eV, for C is 5.4 eV, for Si is 1.1 eV and for Ge is 0.7 eV, related to their atomic size. Therefore Sn is a conductor, C is an insulator and Ge and Si are semiconductors.
New answer posted
7 months agoContributor-Level 10
This is a Short Answer Type Questions as classified in NCERT Exemplar
Explanation- The size of the dopant atom should be such that their presence in the pure semiconductor does not distort the semiconductor but easily contribute the charge carriers on forming covalent bonds with Si or Ge atoms, which are provided by group XIII or group XV elements.
New answer posted
7 months agoContributor-Level 10
This is a Long Answer Type Questions as classified in NCERT Exemplar
Explanation- IE=IC+IB and Ic=
IcRc+VCE+IERE=VCC
RIB+VBE+IERE=Vcc
IE=Ic=

From above equation
(R+ E)IB=VCC-VBE
IB=
( )=
( )=1.56
Rc=1.56-1=0.56kohm
New answer posted
7 months agoContributor-Level 10
This is a Long Answer Type Questions as classified in NCERT Exemplar
Explanation-Ic= IE
Rc= 7.8Kohm
Ic (Rc+RE)+VCE= 12
(RE+RC)
RE+RC= 9
RE= 9-7.3= 1.2kohm
VE= IE RE
= 1
Voltage VB=VE+VBE= 1.2+0.5= 1.7V
I=
Resistance RB=

New answer posted
7 months agoContributor-Level 10
This is a Long Answer Type Questions as classified in NCERT Exemplar
Explanation- a) In V- graph of condition (i), a reverse characteristics is shown in fig. (c). Here A is connected to n - side of p-n junction and B is connected to p -side of p-n junction I with a resistance in series.
(b) In V- graph of condition (ii), a forward characteristics is shown in fig. (d), where 0.7 V is
the knee voltage of p-n junction I 1/slope= (1/1000)? It means A is connected to n -side of p n- junction and B is connected to p-side of p n- junction and resistance R is in series of p n- junction between A and B.
(c) In V- graph of condition (iii), a
New answer posted
7 months agoContributor-Level 10
This is a Long Answer Type Questions as classified in NCERT Exemplar
Y= A'B+A.B'=Y1+Y2
Y1= A.B and Y2= A.B'
Y1 can be obtained as output of AND GATE I for which one Input is of A through NOT GATE and
another input is of B. Y2 can be obtained as output of AND GATE II for which one input is of A
and other input is of B through NOT gate.
Now Y2 can be obtained as output from or gate, where, Y1 and Y2 are input of or gate.
Thus, the given table can be obtained from the logic circuit given below

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