Semiconductor Electronics

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Explanation- The NOT GATE is a device which has only one input and one output i.e., A'=Y means Y equals NOT A.

This GATE cannot be realised by using diodes. However it can be realised by making use of a

transistor. This ca

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Explanation- 

OR GATE gives the desired output.

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Explanation- as base current I_B = $\frac{V_{BB}-V_{BE}}{R_i}$

As R_i is increased I_B is decreased.

And collector current is I_c = I_B as I_B decreased I_c also decreased and the rading of voltmeter and ammeter also decreased.

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Explanation- E=hc/ $\lambda$ = $\frac{6.6\times {10}^{-34}\times 3\times {10}^8}{6000\times {10}^{-10}\times 1.6\times {10}^{-19}}$ = 2.06eV

The incident radiation which is detected by the photodiode having energy should be greater

Than the band-gap. So, it is only valid for diode D2.Then, diode D2 will detect this radiation.

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Explanation- (i) The characteristic curve (a) is of Zener diode and curve (b) is of solar cell.
(ii) The point P in fig. (a) represents Zener break down voltage.
(iii) In fig. (b), the point Q represents zero voltage and neg

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Explanation- In CE transistor amplifier, the power gain is very high.

In this circuit, the extra power required for amplified output is obtained from DC source.

Thus, the circuit used does not violet the law of conservatio

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Explanation- as we know total voltage amplification = $\frac{outputsignalvoltage}{inputsignalvoltge}$

Av_x= 10, Av_y = 20, Av_z = 30

$?$ v_i = 1mV= 10^-3V

So according to formula

 = (Av_x ) (Av_y ) (Av_z)

$?$ v_o =  (Av_x ) (Av_y ) (Av_z) $?$ v_i

  = 10^{-3 $\times 20\times 30\times 10$} =6V

So in first cas

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Explanation- diode only works in forward biased. So output waveform is

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Explanation- We cannot measure the potential barrier across a p-n junction by a voltmeter because the resistance of voltmeter is very high as compared to the junction resistance.

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Explanation- A material is a conductor if in its energy band diagram, there is no energy gap between conduction band and valence band. For insulator, the energy gap is large and for

semiconductor the energy gap is moderat