Semiconductor Electronics: Materials, Devices and

Very small change in minority charge carriers produces high value of reverse bias current.

Y ->And gate

Voltage gain = $\frac{I_C{R}_0}{I_B{R}_i}$  

R₀ ->Output Resistance

R_i ->Input Resistance

I_C ->Collector current

I_{B ->}Base current

Voltage gain = $\frac{I_C}{I_B}\frac{R_0}{R_i}=\frac{\left(5*10^{-3}\right)}{\left(100*10^{-6}\right)}*\frac{60}{200}=15$  

Truth table for Input & Output

Now, Truth Table for option B.

V-l characteristics graph is plotted in 4th quadrant for solar cell.

$i_{\left(zener-max\right)}=25mA$                                                                

 20 – i_max R – 8 = 0

i_max R = 12At minimum zener current $\left(\mu A\right):-$  

$20-i_{min}R-i_{min}{R}_L=0$  

  $\frac{R}{R_L}=\frac{12}{8}=\frac{3}{2}$

${\mathcal{l}}_{min}R=12$

  $i_{min}{R}_L=8$

At max^m zener current –

$20-i_{max}R-8=0$  

$i_L=O\left\{as{i}_{z}ma{x}^m=25mA\right\}$             

i_maxR = 12v

25 * 10^-3 R = 12

$R=\frac{12*10^3}{25}=12*40=480\Omega$