Semiconductor Electronics: Materials, Devices and

Given below are two statements:

Statement I: Photovoltaic devices can convert optical radiation into electricity.

Statement II: Zener diode is designed to operate under reverse bias in breakdown region.

In the light of the above statements, choose the most appropriate answer from the options given below:

A full wave rectifier circuit consists of two p-n junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these components remove the ac ripple from the rectified output

The typical output characteristics curve for a transistor working in the common-emitter configuration is shown in the figure.

The estimated current gain from the figure is.

The correct relation between α (ratio of collector current to emitter current) and β (ratio of collector current to base current) of a transistor is :

The output of the given combination gates represents:

The out put characteristics of a transistor is shown in the figure. When VCE is 10 V and Ic = 4.0 mA, then value of βac is

Identify the operation performed by the circuit given below:

Take the breakdown voltage of the zener diode used in the given circuit as 6 V. For the input voltage shown in figure below, the time variation of the output voltage is: (Graphs drawn are schematic and not to scale)

Take the breakdown voltage of the zener diode used in the given circuit as $6\mathrm{V}$ $$ . For the input voltage shown in figure below, the time variation of the output voltage is: (Graphs drawn are schematic and not to scale)

If a semiconductor photodiode can detect a photon with a maximum wavelength of 400 $\mathrm{n}\mathrm{m}$   , then its band gap energy is:

Planck's constant $h=6.63*{10}^{-34}$ J.s.

Speed of light $\mathrm{}\mathrm{c}=3*{10}^8\mathrm{m}/\mathrm{s}$