Solid States
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The incorrect statement about the imperfections in solids is
The incorrect statement about the imperfections in solids is
· Density of solid decreases in Schottky defect and vacancy defect.
· Density of solid increases in interstitial defect.
· Density of solid remain unchanged in Frenkel defect.
77. Assertion: Semiconductors are solids with conductivities in the intermediate range from 10−6 104 ohm−1 m1.
Reason: Intermediate conductivity in semiconductor is due to partially filled valence band.
77. Assertion: Semiconductors are solids with conductivities in the intermediate range from 10−6 104 ohm−1 m1.
Reason: Intermediate conductivity in semiconductor is due to partially filled valence band.
77. Option (iii) Assertion is correct statement, but reason is wrong statement is the answer since intermediate conductivity in semiconductor is due to the small energy gap between valence band and conduction band and hence the assertion is correct, but the reason is wrong.
76. Assertion: The packing efficiency is maximum for the fcc structure.
Reason: The coordination number is 12 in fcc structures.
76. Assertion: The packing efficiency is maximum for the fcc structure.
Reason: The coordination number is 12 in fcc structures.
76. Option (ii) Assertion and reason both are correct statements, but reason is not correct explanation for assertion is the answer since in fcc structure the number of atoms present = 4 per unit cell which provides a maximum packing efficiency of 74%.
75. Assertion: Total number of octahedral voids present in unit cell of cubic close packing including the one that is present at the body centre, is four.
Reason: Besides the body centre there is one octahedral void present at the centre of each of the six faces of the unit cell and each of which is shared between two adjacent unit cells.
75. Assertion: Total number of octahedral voids present in unit cell of cubic close packing including the one that is present at the body centre, is four.
Reason: Besides the body centre there is one octahedral void present at the centre of each of the six faces of the unit cell and each of which is shared between two adjacent unit cells.
75. Option (iii) Assertion is the correct statement, but the reason is wrong is the answer since besides the body centre there is one octahedral void at the centre of each 12 edges which is shared between four adjacent unit cells. Thus, Octahedral voids present at the body centre of the cube =
74. Assertion: Graphite is a good conductor of electricity however diamond belongs to the category of insulators.
Reason: Graphite is soft in nature on the other hand diamond is very hard and brittle.
74. Assertion: Graphite is a good conductor of electricity however diamond belongs to the category of insulators.
Reason: Graphite is soft in nature on the other hand diamond is very hard and brittle.
74. Option (ii) Assertion and reason both are correct statements, but reason is not correct explanation for assertion is the answer since in graphite carbon atoms are arranged in different layers and each atom is covalently bonded to three of its neighbouring atoms in the same layer due to whic
Note: In the following questions a statement of assertion followed by a statement of reason is given. Choose the correct answer out of the following choices.
(i) Assertion and reason both are correct statements and reason is correct explanation for assertion.
(ii) Assertion and reason both are correct statements, but reason is not correct explanation for assertion.
(iii) Assertion is correct statement, but reason is wrong statement.
(iv) Assertion is wrong statement, but reason is correct statement.
73. Assertion: The total number of atoms present in a simple cubic unit cell is one.
Reason: Simple cubic unit cell has atoms at its corners, each of which is shared between eight adjacent unit cells.
Note: In the following questions a statement of assertion followed by a statement of reason is given. Choose the correct answer out of the following choices.
(i) Assertion and reason both are correct statements and reason is correct explanation for assertion.
(ii) Assertion and reason both are correct statements, but reason is not correct explanation for assertion.
(iii) Assertion is correct statement, but reason is wrong statement.
(iv) Assertion is wrong statement, but reason is correct statement.
73. Assertion: The total number of atoms present in a simple cubic unit cell is one.
Reason: Simple cubic unit cell has atoms at its corners, each of which is shared between eight adjacent unit cells.
73. Option (i) Assertion and reason both are correct statements and reason is correct explanation for assertion is the answer since in simple cubic crystal unit cell, the total number of atoms are given as - 8 * 18=1
72. Match the type of packing given in Column I with the items given in Column II.
Column I
Column II
(i) Square close packing in two dimensions.
(a) Triangular voids
(ii) Hexagonal close packing two dimensions.
(b) Pattern of spheres is repeated in every fourth layer
(iii) Hexagonal close packing in three dimensions.
(c) Coordination number = 4
(iv) Cubic close packing in three dimensions.
(d) Pattern of sphere is repeated in alternate layers
72. Match the type of packing given in Column I with the items given in Column II.
|
Column I |
Column II |
|
(i) Square close packing in two dimensions. |
(a) Triangular voids |
|
(ii) Hexagonal close packing two dimensions. |
(b) Pattern of spheres is repeated in every fourth layer |
|
(iii) Hexagonal close packing in three dimensions. |
(c) Coordination number = 4 |
|
(iv) Cubic close packing in three dimensions. |
(d) Pattern of sphere is repeated in alternate layers |
72. (i) → (c); (ii) → (a); (iii) → (d); (iv) → (b)
71. Match the items given in Column I with the items given in Column II.
Column I
Column II
(i) Mg in solid state
(a) p-Type semiconductor
(ii) MgCl2in molten state
(b) n-Type semiconductor
(iii) Silicon with phosphorus
(c) Electrolytic conductors
(iv) Germanium with boron
(d) Electronic conductors
71. Match the items given in Column I with the items given in Column II.
|
Column I |
Column II |
|
(i) Mg in solid state |
(a) p-Type semiconductor |
|
(ii) MgCl2in molten state |
(b) n-Type semiconductor |
|
(iii) Silicon with phosphorus |
(c) Electrolytic conductors |
|
(iv) Germanium with boron |
(d) Electronic conductors |
71. (i) → (d); (ii) → (c); (iii) → (b); (iv) → (a)
70. Match the types of defects given in Column I with the statement given in Column II.
Column I
Column II
(i) Impurity defect
(a) NaCl with anionic sites called F-centres
(ii) Metal excess defect
(b) FeO with Fe3+
(iii) Metal deficiency defect
(c) NaCl with Sr2+ and some cationic sites vacant
70. Match the types of defects given in Column I with the statement given in Column II.
|
Column I |
Column II |
|
(i) Impurity defect |
(a) NaCl with anionic sites called F-centres |
|
(ii) Metal excess defect |
(b) FeO with Fe3+ |
|
(iii) Metal deficiency defect |
(c) NaCl with Sr2+ and some cationic sites vacant |
70. (i) → (c); (ii) → (a); (iii) → (b)
69. Match the type of unit cell given in Column I with the features given in Column II.
Column I
Column II
(i) Primitive cubic unit cell
(a) Each of the three perpendicular edges compulsorily have the different edge length i.e., a≠b≠c.
(ii) Body centred cubic unit cell
(b) Number of atoms per unit cell is one.
(iii) Face centred cubic unit cell
(c) Each of the three perpendicular edges compulsorily have the same edge length i.e., a = b = c
(iv) End centred orthorhombic
(d) In addition to the contribution from the unit cell to the corner atoms, the number of atoms present in a unit cell is one.
(e) In addition to the contribution from the corner atoms the number of atoms present in a unit cell is three.
69. Match the type of unit cell given in Column I with the features given in Column II.
|
Column I |
Column II |
|
(i) Primitive cubic unit cell |
(a) Each of the three perpendicular edges compulsorily have the different edge length i.e., a≠b≠c. |
|
(ii) Body centred cubic unit cell |
(b) Number of atoms per unit cell is one. |
|
(iii) Face centred cubic unit cell |
(c) Each of the three perpendicular edges compulsorily have the same edge length i.e., a = b = c |
|
(iv) End centred orthorhombic |
(d) In addition to the contribution from the unit cell to the corner atoms, the number of atoms present in a unit cell is one. |
|
(e) In addition to the contribution from the corner atoms the number of atoms present in a unit cell is three. |
69. (i) → (b); (ii) → (c); (iii) → (c); (iv) → (a)