Devise an effective preparation strategy for GATE 2023 with Electronics & Communication Engineering (EC) Syllabus. Read more details here.
GATE 2023 Syllabus for Electronics & Communication Engineering
GATE 2023 syllabus for Electronics and Communication Engineering (ECE) branch has been released by the official exam conducting authority on July 27, 2022. IIT Kanpur has also released the GATE application form 2023 on August 30 which will remain available till September 30, 2022. GATE 2023 will be conducted on February 4, 5, 11, and 12, 2023. Since GATE exam has anly a few month away, aspirants must complete their preparation before the exam date. Candidates seeking admission in the MTech course through the GATE ECE exam must be aware of the syllabus in order to start their preparation and score good marks.
The GATE 2023 syllabus for Electronics and Communication Engineering (ECE) consists of section-wise topics. Knowing the GATE syllabus for ECE will help candidates in making a good preparation strategy which will help them achieve the desired goals. As per the syllabus guidelines available on the official website, Electronics and Communication Engineering Syllabus has eight sections: Engineering Mathematics, Networks Signals and Systems, Electronic Devices, Analog Circuits, Digital Circuits, Control Systems, Communications and Electromagnetics. Along with the GATE 2023 Electronics and Communication Engineering syllabus, candidates are also advised to check the GATE 2023 exam pattern for effective exam preparation.
Latest Update: GATE 2023 Application Form released at gate.iitk.ac.in
GATE 2023 Syllabus For ECE – General Aptitude
This section of the GATE Syllabus includes questions based on Verbal Ability and Numerical Ability. The different topics included in the GATE syllabus for General Aptitude are the same for all the exams. Have a look:
Verbal Ability: English grammar, sentence completion, verbal analogies, word groups, instructions, critical reasoning and verbal deduction.
Numerical Ability: Numerical computation, numerical estimation, numerical reasoning and data interpretation.
GATE 2023 Syllabus for Electronics and Communication Engineering (ECE)
Section 1: Engineering Mathematics
Linear Algebra: Vector space, basis, linear dependence and independence, matrix algebra, Eigen values and eigen vectors, rank, solution of linear equations- existence and uniqueness.
Calculus: Mean value theorems, theorems of integral calculus, evaluation of definite and improper integrals, partial derivatives, maxima and minima, multiple integrals, line, surface and volume integrals, Taylor series.
Differential Equations: First order equations (linear and nonlinear), higher order linear differential equations, Cauchy's and Euler's equations, methods of solution using a variation of parameters, complementary function and particular integral, partial differential equations, variable separable method, initial and boundary value problems.
Vector Analysis: Vectors in plane and space, vector operations, gradient, divergence and curl, Gauss's, Green's and Stokes’ theorems.
Complex Analysis: Analytic functions, Cauchy’s integral theorem, Cauchy’s integral formula, sequences, series, convergence tests, Taylor and Laurent series, residue theorem.
Probability and Statistics: Mean, median, mode, standard deviation, combinatorial probability, probability distributions, binomial distribution, Poisson distribution, exponential distribution, normal distribution, joint and conditional probability.
Section 2: Networks, Signals and Systems
Circuit Analysis: Node and mesh analysis, superposition, Thevenin's theorem, Norton’s theorem, reciprocity. Sinusoidal steady state analysis: phasors, complex power, maximum power transfer. Time and frequency domain analysis of linear circuits: RL, RC and RLC circuits, solution of network equations using Laplace transform.
Linear 2-port network parameters, wye-delta transformation.
Continuous-time Signals: Fourier series and Fourier transform, sampling theorem and applications.
Discrete-time Signals: DTFT, DFT, z-transform, discrete-time processing of continuous-time signals.
LTI systems: definition and properties, causality, stability, impulse response, convolution, poles and zeroes, frequency response, group delay, phase delay.
Section 3: Electronic Devices
Energy bands in intrinsic and extrinsic semiconductors, equilibrium carrier concentration, direct and indirect band-gap semiconductors.
Carrier Transport: diffusion current, drift current, mobility and resistivity, generation and recombination of carriers, Poisson and continuity equations.
P-N junction, Zener diode, BJT, MOS capacitor, MOSFET, LED, photo diode and solar cell.
Section 4: Analog Circuits
Diode Circuits: clipping, clamping and rectifiers.
BJT and MOSFET Amplifiers: biasing, ac coupling, small signal analysis, frequency response. Current mirrors and differential amplifiers.
Op-amp Circuits: Amplifiers, summers, differentiators, integrators, active filters, Schmitt triggers and oscillators
Section 5: Digital Circuits
Number Representations: binary, integer and floating-point- numbers.
Combinatorial circuits: Boolean algebra, minimization of functions using Boolean identities and Karnaugh map, logic gates and their static CMOS implementations, arithmetic circuits, code converters, multiplexers, decoders.
Sequential Circuits: latches and flip-flops, counters, shift-registers, finite state machines, propagation delay, setup and hold time, critical path delay.
Data Converters: sample and hold circuits, ADCs and DACs.
Semiconductor Memories: ROM, SRAM, DRAM.
Computer Organization: Machine instructions and addressing modes, ALU, data-path and control unit, instruction pipelining.
Section 6: Control Systems
Basic control system components; Feedback principle; Transfer function; Block diagram representation; Signal flow graph; Transient and steady-state analysis of LTI systems; Frequency response; Routh-Hurwitz and Nyquist stability criteria; Bode and root-locus plots; Lag, lead and lag-lead compensation; State variable model and solution of state equation of LTI systems.
Section 7: Communications
Random Processes: auto correlation and power spectral density, properties of white noise, filtering of random signals through LTI systems.
Analog Communications: amplitude modulation and demodulation, angle modulation and demodulation, spectra of AM and FM, super heterodyne receivers.
Information Theory: entropy, mutual information and channel capacity theorem.
Digital Communications: PCM, DPCM, digital modulation schemes (ASK, PSK, FSK, QAM), bandwidth, inter-symbol interference, MAP, ML detection, matched filter receiver, SNR and BER.
Fundamentals of error correction, Hamming codes, CRC.
Section 8: Electromagnetics
Maxwell’s Equations: differential and integral forms and their interpretation, boundary conditions, wave equation, Poynting vector.
Plane Waves and Properties: reflection and refraction, polarization, phase and group velocity, propagation through various media, skin depth.
Transmission Lines: equations, characteristic impedance, impedance matching, impedance transformation, S-parameters, Smith chart. Rectangular and circular waveguides, light propagation in optical fibers, dipole and monopole antennas, and linear antenna arrays.
Click here to download GATE 2023 Syllabus for Mechanical Engineering
GATE Exam Pattern 2023 Highlights
GATE Exam Structure
Number of sections
General Aptitude and the choice of engineering branch
Duration of exam
180 minutes (60 minutes per section)
|Aptitude Engineering, Mathematics, Subject-specific questions|
Language of question paper
Number of answer choices
4 choices in the case of MCQ
No choices in the case of NAT
Mode of examination
Online (Computer-based test)
Multiple Choice Questions (MCQs) - +1 & 2 marks for the correct answer; 1/3 mark will be deducted for 1 mark questions and 2/3 mark will be deducted for 2 marks questions
Numeric Answer Type (NAT) - +1 & 2 marks for the correct answer; no negative marking
FAQs related to GATE 2023 Syllabus ECE
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